Singapore, Singapore

Yongquan Zeng

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nanyang Technological University. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongquan Zeng. Retrieved from https://idiyas.com/inventor/yongquan-zeng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Yongquan Zeng: Innovator in Laser Technology

Introduction

Yongquan Zeng is a prominent inventor based in Singapore, known for his contributions to laser technology. He has developed innovative solutions that enhance the functionality and efficiency of laser sources. His work is particularly significant in the field of photonic crystal structures.

Latest Patents

Yongquan Zeng holds a patent for a "Laser source and method for forming the same." This invention includes a photonic crystal structure with two domains, each associated with distinct sets of Chern numbers. The design features an interface region that defines an optical cavity for lasing, showcasing Zeng's expertise in advanced laser technology. He has 1 patent to his name.

Career Highlights

Zeng is affiliated with Nanyang Technological University, where he continues to push the boundaries of research in laser technology. His academic background and research contributions have established him as a key figure in his field.

Collaborations

Yongquan Zeng has worked alongside notable colleagues, including Udvas Chattopadhyay and Baile Zhang. Their collaborative efforts contribute to the advancement of innovative technologies in laser applications.

Conclusion

Yongquan Zeng's work in laser technology exemplifies the spirit of innovation and research excellence. His contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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