West Lafayette, IN, United States of America

Yongping Fan

This inventor holds 2 USPTO granted patents. Top assignee: Research Corporation Technologies, Inc.. Active years: 1996-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongping Fan. Retrieved from https://idiyas.com/inventor/yongping-fan-p3vdhd2w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1996-1997

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Yongping Fan: Innovator in II-VI Compound Semiconductor Technology

Introduction

Yongping Fan is a notable inventor based in West Lafayette, IN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of II-VI compound semiconductor light-emitting devices. With a total of 2 patents, his work has advanced the capabilities of light-emitting technologies.

Latest Patents

Yongping Fan's latest patents include innovations in Group II-VI compound semiconductor light-emitting devices. One of his patents discloses an ohmic contact for these devices, which includes at least one II-VI quantum well region sandwiched between first and second barrier layers. The quantum well region is further enclosed by first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is also lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material with the formula A.sub.x B.sub.(1-x) C, where A and B are two different elements from Group II, and C is at least one element from Group VI. When the second cladding layer has p-type conductivity, a graded bandgap ohmic contact can be utilized. This contact can be a single continuously graded II-VI p-type region or consist of multiple cells, each having first and second thin layers of p-type II-VI semiconductor materials. Another embodiment of his invention includes a monolithic multicolor light-emitting element capable of emitting four colors, along with a method for fabricating it. This multicolor element consists of four II-VI semiconductor light-emitting devices formed on a single III-V substrate.

Career Highlights

Yongping Fan is currently associated with Research Corporation Technologies, Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in enhancing the performance and efficiency of light-emitting devices.

Collaborations

Some of his notable coworkers include Li He and Jung Han, who have collaborated with him on various projects related to semiconductor technologies.

Conclusion

Yongping Fan's contributions to II-VI compound semiconductor technology have paved the way for advancements in light-emitting devices. His innovative patents reflect

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…