Gyeonggi, South Korea

YongHwan Kwon

This inventor holds 14 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: YongHwan Kwon. Retrieved from https://idiyas.com/inventor/yonghwan-kwon-4zfnx1yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.9

ph-index = 12

Forward Citations = 700(Granted Patents)


Location History:

  • Sungnam-si, KR (2013 - 2014)
  • Seongnam-si, KR (2015)
  • Kyunggi-do, KR (2015 - 2016)

Company Filing History:


Years Active: 2013-2016

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14 patents (USPTO):Explore Patents

Title: Inventor YongHwan Kwon

Introduction: YongHwan Kwon is a prolific inventor hailing from Kyunggi-do, South Korea. He has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: YongHwan Kwon holds several patents in various technological domains, showcasing his versatility and creativity in inventing new solutions to existing problems.

Career Highlights: Throughout his career, YongHwan Kwon has demonstrated a keen ability to identify gaps in the market and develop unique inventions to address them. His innovative spirit has led to the successful commercialization of several of his patented inventions.

Collaborations: YongHwan Kwon has collaborated with leading research institutions, universities, and companies to further his research and bring his inventions to life. His collaborative efforts have resulted in the development of cutting-edge technologies that have had a lasting impact on the industry.

Conclusion: YongHwan Kwon's passion for innovation and his dedication to pushing the boundaries of what is possible make him a standout figure in the world of inventors. His contributions continue to inspire future generations of innovators to think outside the box and pursue their creative ideas.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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