Yongfeng Wang

This inventor holds 16 USPTO granted patents and 2 published patent applications, primarily in Polycrystalline Diamond Technology. Top assignee: Sf Diamond Co., Ltd.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongfeng Wang. Retrieved from https://idiyas.com/inventor/yongfeng-wang-oqwsntno

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16 (Patent Applications = 2)

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 60(Granted Patents)

Location History:

Henan, CN (2023)
Zhengzhou, CN (2023 - 2024)

Company Filing History:

16 out of 20

Sf Diamond Co., Ltd.

patents

Years Active: 2023-2025

Loading Chart...

Areas of Expertise:

Polycrystalline Diamond

Compact Design

Drill Bit

Surface Structure

Raised Parallelogram

Groove Formation

Tripartite Structure

Double-Layer Structure

Peripheral Extension

Extensions

Diamond Compact Table

Innovative Engineering

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. D1068884 - Polycrystalline diamond compact with a raised parallelogram surface and a groove formed therein (2025-04-01),

2. D1057780 - Polycrystalline diamond compact with a tripartite raised surface (2025-01-14),

3. D1057779 - Polycrystalline diamond compact with a raised surface and groove therein (2025-01-14),

4. 12168608 - Polycrystalline diamond compact table with polycrystalline diamond extensions therefrom (2024-12-17),

5. 12103853 - Polycrystalline diamond compact table with polycrystalline diamond extensions therefrom (2024-10-01),

6. D1026981 - Polycrystalline diamond compact with a tripartite raised surface (2024-05-14),

7. D1026980 - Polycrystalline diamond compact with a raised surface and groove therein (2024-05-14),

8. D1006074 - Polycrystalline diamond compact with a raised triangular structure (2023-11-28),

9. D1006073 - Polycrystalline diamond compact with a raised surface sloping to a peripheral extension (2023-11-28),

10. 11772977 - Polycrystalline diamond compact table with polycrystalline diamond extensions therefrom (2023-10-03),

11. D997219 - Polycrystalline diamond compact with a double-layer structure (2023-08-29),

12. D989827 - Drill bit (2023-06-20),

13. D989826 - Drill bit (2023-06-20),

14. D982632 - Drill bit (2023-04-04),

15. D982631 - Drill bit (2023-04-04),

Title: The Inventive Journey of Yongfeng Wang

Introduction: Yongfeng Wang is a prominent inventor based in Henan, China, who has made significant contributions to the field of advanced materials. With a remarkable portfolio of 16 patents, his work primarily focuses on innovative diamond compact technologies that enhance industrial applications.

Latest Patents: Yongfeng Wang’s latest inventions include two notable patents: the "Polycrystalline Diamond Compact with a Raised Parallelogram Surface and a Groove Formed Therein" and the "Polycrystalline Diamond Compact with a Raised Surface and Groove Therein." These innovations showcase his expertise in creating advanced diamond materials that exhibit improved performance in various applications.

Career Highlights: As an inventor at Sf Diamond Co., Ltd., Yongfeng Wang has solidified his reputation as a leader in the diamond technology sector. His commitment to innovation and excellence has not only advanced his company's product offerings but has also contributed to the overall development of the industry.

Collaborations: Throughout his career, Yongfeng has collaborated with notable peers, including Weifeng Du and Haijiang Fang. These partnerships highlight the importance of teamwork in propelling innovation and driving technological advancements in the field.

Conclusion: Yongfeng Wang's contributions to the world of inventions, particularly in polycrystalline diamond technology, reflect his dedication to innovation. With an impressive array of patents and valuable collaborations, he continues to shape the future of advanced materials and enhance the capabilities of industries worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: