Yongdan Huang

Title: Yongdan Huang: Innovator in Terahertz Modulation Technology

Introduction

Yongdan Huang is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of terahertz technology, particularly through his innovative patent related to terahertz modulators. His work has implications for various applications in telecommunications and imaging technologies.

Latest Patents

Yongdan Huang holds a patent titled "Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof." This invention provides a terahertz modulator that includes a plasmon and a cavity. The patent discloses a resonance absorption mechanism caused by the collective oscillation of electrons, known as plasma waves. To enhance the coupling strength between the terahertz wave and the plasmon, Huang integrated a GaN/AlGaN high electron mobility transistor structure with a grating gate into a terahertz Fabry-Pérot cavity. This integration results in the formation of a plasmon polariton due to the strong coupling of the plasmon and cavity mode.

Career Highlights

Throughout his career, Yongdan Huang has worked with esteemed organizations, including the Chinese Academy of Sciences and Tencent Technology Company Limited. His experience in these institutions has allowed him to develop and refine his innovative ideas in the field of terahertz technology.

Collaborations

Yongdan Huang has collaborated with notable colleagues, including Hua Qin and Zhipeng Zhang. Their joint efforts have contributed to advancements in their respective fields and have fostered a collaborative environment for innovation.

Conclusion

Yongdan Huang is a key figure in the development of terahertz modulation technology. His patent and career achievements reflect his dedication to advancing scientific knowledge and technological innovation. His work continues to influence the field and inspire future research.