Anyang, South Korea

Yongchul Ahn

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1995-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongchul Ahn. Retrieved from https://idiyas.com/inventor/yongchul-ahn-w1ao3w4w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 43(Granted Patents)


Location History:

  • Ahnyang, KR (1995)
  • Kyungki-do, KR (1997)

Company Filing History:


Years Active: 1995-1997

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2 patents (USPTO):Explore Patents

Title: Yongchul Ahn: Innovator in Semiconductor Technology

Introduction

Yongchul Ahn is a prominent inventor based in Anyang, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of interlayer-dielectric films. With a total of 2 patents to his name, Ahn's work has been instrumental in advancing semiconductor manufacturing processes.

Latest Patents

Ahn's latest patents include a "Method for fabricating doped interlayer-dielectric film of semiconductor" and a "Method for fabricating an interlayer-dielectric film of a semiconductor." In the first patent, the surface of a borophosphosilicate glass (BPSG) dielectric film undergoes a surface treatment, such as plasma treatment with N₂O, N₂ + NH₃, N₂, O₂, or O₃. This treatment reduces erosion caused by H₂SO₄ boiling or humidity absorption from the atmosphere, allowing for reflow processing at temperatures ideally below 850°C, resulting in an interlayer dielectric film of excellent planarity. The second patent similarly focuses on changing the surface of a BPSG dielectric film through plasma etching, achieving comparable results in terms of erosion reduction and film quality.

Career Highlights

Yongchul Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics and semiconductor industry. His work at Samsung has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to semiconductor technology.

Collaborations

Ahn has worked alongside notable colleagues such as Changgyu Kim and Changki Hong. Their collaborative efforts have played a crucial role in the development of innovative semiconductor solutions.

Conclusion

Yongchul Ahn's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his importance in the field. His innovative methods for fabricating interlayer-dielectric films are paving the way for advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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