Seoul, South Korea

Yong-oon Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong-oon Hwang. Retrieved from https://idiyas.com/inventor/yong-oon-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Yong-oon Hwang: Innovator in Semiconductor Technology

Introduction

Yong-oon Hwang is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Yong-oon Hwang holds a patent for a "Method for forming a device isolation film of a semiconductor device." This patent outlines a comprehensive process that includes forming a pad oxide film on a semiconductor substrate, creating an oxidation buffer layer, and developing a device isolation film through a series of thermal oxidation processes. His work is crucial for enhancing the performance and reliability of semiconductor devices.

Career Highlights

Hwang is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His role at Samsung allows him to work on cutting-edge semiconductor technologies, contributing to the advancement of the industry.

Collaborations

Yong-oon Hwang collaborates with talented colleagues, including Yong-woo Hyung and Don-young Ku. These partnerships foster innovation and drive progress in their projects.

Conclusion

Yong-oon Hwang's contributions to semiconductor technology through his patent and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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