Seongnam, South Korea

Yong Hwan Kwon

This inventor holds 46 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Packaging. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong Hwan Kwon. Retrieved from https://idiyas.com/inventor/yong-hwan-kwon-do99oktk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 97.8

Average Co-Inventor Count = 5.6

ph-index = 22

Forward Citations = 1,488(Granted Patents)


Location History:

  • Kyungki-do, KR (2002 - 2003)
  • Suwon, KR (2001 - 2006)
  • Seongnam-si, KR (2015 - 2016)
  • Suwon-si, KR (2010 - 2022)

Company Filing History:


Years Active: 2001-2022

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Areas of Expertise:
Semiconductor Package
Graphical User Interface
Display Screen
Electro-less Plating
Stacked Chip Package
Transitional Interface
Manufacturing Process
Coating Thickness
Device Design
User Interaction
Trenches
46 patents (USPTO):Explore Patents

Title: Inventor Yong Hwan Kwon

Introduction: Yong Hwan Kwon is a prolific inventor based in Seongnam-si, South Korea, known for his groundbreaking contributions to various technological fields.

Latest Patents: Yong Hwan Kwon holds several recent patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in research and development, Yong Hwan Kwon has worked for leading tech companies and research institutions, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Yong Hwan Kwon has collaborated with top scientists, engineers, and designers globally, fostering a culture of creativity and excellence in his projects.

Conclusion: Yong Hwan Kwon's dedication to innovation and his remarkable track record of successful inventions solidify his position as a prominent figure in the world of technology and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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