Yoichiro Sato

Title: Yoichiro Sato: Innovator in N-Type Semiconductor Diamond Technology

Introduction

Yoichiro Sato is a prominent inventor based in Ibaraki, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of n-type semiconductor diamonds. His innovative work has led to advancements that could impact various applications in electronics and materials science.

Latest Patents

Yoichiro Sato holds a patent for an innovative method of fabricating n-type semiconductor diamonds. The patent describes a process where a substrate is polished and made inclined, then exposed to hydrogen plasma to achieve a smooth surface. The substrate is heated to a controlled temperature of 830°C while a gas mixture of 1% methane, 50 ppm hydrogen sulfide, and hydrogen flows through a tubular reaction vessel at 200 ml/min. This process excites microwave plasma, allowing n-type semiconductor diamond to grow epitaxially on the substrate. The resulting ion-doped n-type semiconductor exhibits a single donor level of activation energy at 0.38 eV, characterized by high mobility and quality.

Career Highlights

Yoichiro Sato is affiliated with the Japan Science and Technology Agency, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in high-performance electronic devices.

Collaborations

Throughout his career, Sato has collaborated with notable colleagues, including Toshihiro Ando and Eiji Yasu. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative research environment.

Conclusion

In summary, Yoichiro Sato is a key figure in the field of semiconductor technology, with a focus on n-type semiconductor diamonds. His innovative patent and ongoing research at the Japan Science and Technology Agency highlight his commitment to advancing this critical area of technology.