The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Mar. 27, 2000
Toshihiro Ando, Ibaraki, JP;
Yoichiro Sato, Ibaraki, JP;
Eiji Yasu, Ibaraki, JP;
Mika Gamo, Ibaraki, JP;
Isao Sakaguchi, Ibaraki, JP;
Toshihiro Ando, Ibaraki, JP;
Yoichiro Sato, Ibaraki, JP;
Eiji Yasu, Ibaraki, JP;
Mika Gamo, Ibaraki, JP;
Isao Sakaguchi, Ibaraki, JP;
Japan Science and Technology Agency, Saitama-Ken, JP;
Abstract
A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.