Company Filing History:
Years Active: 2003-2006
Title: Yoichi Nagatake: Innovator in SIMOX Substrate Technology
Introduction
Yoichi Nagatake is a prominent inventor based in Futtsu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of SIMOX substrates. With a total of 2 patents to his name, Nagatake's work has advanced the quality and efficiency of silicon-on-insulator (SOI) substrates.
Latest Patents
Nagatake's latest patents include a production method for SIMOX substrates and the SIMOX substrate itself. The SIMOX substrate is produced by employing an oxygen ion implantation amount in a low dose range. This substrate is characterized by a high-quality SOI substrate with an increased thickness of a buried oxide (BOX) layer. The method involves the implantation of oxygen ions in a silicon substrate followed by high-temperature heat treatment. This process results in a buried oxide layer and a surface silicon layer, enhancing the substrate's properties.
Career Highlights
Nagatake is associated with Nippon Steel Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to the creation of SOI substrates that allow for improved yield and excellent electric properties. The SOI substrate is formed by creating an embedded oxide layer on a silicon single crystal substrate, which is crucial for device formation.
Collaborations
Nagatake has collaborated with notable coworkers, including Atsuki Matsumura and Keisuke Kawamura. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.
Conclusion
Yoichi Nagatake's contributions to the field of semiconductor technology, particularly through his patents on SIMOX substrates, have significantly impacted the industry. His work continues to influence the development of high-quality SOI substrates, showcasing his role as a leading inventor in this domain.