The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Aug. 01, 2000
Isao Hamaguchi, Futtsu, JP;
Atsushi Ikari, Futtsu, JP;
Atsuki Matsumura, Futtsu, JP;
Keisuke Kawamura, Futtsu, JP;
Takayuki Yano, Futtsu, JP;
Yoichi Nagatake, Futtsu, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm .