Company Filing History:
Years Active: 2002
Title: **Yoichi Kanuma: Innovator in Non-volatile Semiconductor Memory Technology**
Introduction
Yoichi Kanuma is a prominent inventor hailing from Gunma, Japan. With a notable patent to his name, Kanuma has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices.
Latest Patents
Kanuma's patent, titled "Non-volatile semiconductor memory device with barrier and insulating films," introduces a sophisticated design that enhances the performance and durability of memory cells. The invention describes a barrier film made of a silicon oxynitride (SiON) layer positioned below an interlayer insulating film. This film encompasses the floating gate and control gate, creating an effective moisture barrier while improving the barrier properties through additional TEOS (tetraethyl orthosilicate) or spin-on-glass (SOG) films. This innovative configuration prevents moisture or hydrogen atoms from diffusing and being trapped within the tunneling oxide film, thereby improving the trap-up rate and extending the operational life of the memory cell.
Career Highlights
Kanuma holds a patent that reflects his dedication to advancing semiconductor technology. His work at Sanyo Electric Co., Ltd. showcases his commitment to innovation and the development of cutting-edge memory devices that are vital for modern electronic systems.
Collaborations
Throughout his tenure at Sanyo Electric, Kanuma has collaborated with notable colleagues, including Takashi Noma and Masaji Hara. Together, they have worked towards enhancing the capabilities of semiconductor devices, contributing to the company's reputation for technological advancements in the sector.
Conclusion
Yoichi Kanuma's contributions to semiconductor technology through his innovative patent demonstrate the importance of research and development in the ever-evolving field of electronics. His dedication, along with the support of his talented colleagues, underscores the collaborative effort required to push the boundaries of current technology and improve the functionality of memory devices essential for modern applications.