The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2002

Filed:

Feb. 16, 2000
Applicant:
Inventors:

Takashi Noma, Gunma, JP;

Masaji Hara, Gunma, JP;

Kimihide Saito, Gunma, JP;

Ryo Kawai, Gunma, JP;

Yoichi Kanuma, Gunma, JP;

Kazuo Okada, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract

A barrier film of a SiON film is formed below an interlayer insulating film which is a single layer film or laminated film of an TEOS film or SOG film covering a floating gate and control gate . The SiON film which is good in moisture blocking but poor in coverage is covered with another TEOS film which is better in coverage than the SiON film, thereby improving the barrier property of the barrier film. Such a configuration prevents moisture or H atoms contained in the TEOS film or SOG film from being diffused and trapped by the tunneling oxide film , thereby improving the trap-up rate and hence endurance characteristic and extending the operation life of a memory cell.


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