Seoul, South Korea

Yohei Kotsugi

This inventor holds 1 USPTO granted patent. Top assignees: Tanaka Kikinzoku Kogyo K.k., Yeungnam University. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yohei Kotsugi. Retrieved from https://idiyas.com/inventor/yohei-kotsugi-pdf1afxe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Yohei Kotsugi: Innovator in Ruthenium Thin Film Technology

Introduction

Yohei Kotsugi is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of materials science, particularly in the development of methods for forming thin films. His innovative approach has led to advancements in various applications, including electronics and coatings.

Latest Patents

Kotsugi holds a patent for a method for forming a ruthenium thin film. This invention utilizes a ruthenium precursor known as tricarbonyl (η-methylene-1,3-propanediyl) ruthenium ((CO)Ru-TMM). The method involves atomic layer deposition at temperatures ranging from 200° C. to 350° C., using this precursor along with a reaction gas. The reaction gas can include one or more components selected from oxygen, hydrogen, water, and ammonia.

Career Highlights

Throughout his career, Kotsugi has worked with esteemed organizations, including the Research Cooperation Foundation of Yeungnam University and Tanaka Kikinzoku Kogyo Co., Ltd. His work has been instrumental in advancing the understanding and application of ruthenium thin films in various industries.

Collaborations

Kotsugi has collaborated with Soo-Hyun Kim, contributing to the development of innovative technologies in his field.

Conclusion

Yohei Kotsugi's contributions to the field of thin film technology, particularly through his patented methods, highlight his role as a significant inventor. His work continues to influence advancements in materials science and related applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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