The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 29, 2021
Research Cooperation Foundation of Yeungnam University, Gyeongsan-si, KR;
Tanaka Kikinzoku Kogyo K.k., Tokyo, JP;
Soo-Hyun Kim, Suseong-gu, KR;
Yohei Kotsugi, Seoul, KR;
RESEARCH COOPERATION FOUNDATION OF YEUNGNAM UNIVERSITY, Gyeongsan-Si, KR;
TANAKA KIKINZOKU KOGYO K.K., Tokyo, JP;
Abstract
The present invention relates to a ruthenium thin film-forming method for forming a ruthenium thin film using a ruthenium precursor, in which tricarbonyl (η-methylene-1,3-propanediyl) ruthenium ((CO)Ru-TMM)) having a structure represented by the following formula 1 is used as the ruthenium precursor, and the method includes a stage of forming a ruthenium thin film by an atomic layer deposition at a temperature ranging from 200° C. to 350° C. using this ruthenium precursor and a reaction gas. As the reaction gas, one or more selected from the group consisting of oxygen, hydrogen, water and ammonia are preferably applied.