Company Filing History:
Years Active: 2016
Title: Yohei Fukumoto: Innovator in Semiconductor Memory Technology
Introduction
Yohei Fukumoto is a prominent inventor based in Shiojiri, Japan. He has made significant contributions to the field of semiconductor memory technology. His innovative work has led to the development of a unique non-volatile semiconductor memory design.
Latest Patents
Fukumoto holds a patent for a non-volatile semiconductor memory with a nitride sidewall contacting a nitride layer of an ONO gate stack. This invention addresses the adverse effects caused by process charge. The memory structure includes a silicon substrate, a first silicon oxide film, a second silicon oxide film, a first silicon nitride film, and a second silicon nitride film. The design ensures that the first silicon oxide film is layered on the silicon substrate, with the first silicon nitride film layered on top of it. The second silicon oxide film is then layered on the first silicon nitride film, while the second silicon nitride film has parts that contact both the first silicon nitride film and the silicon substrate.
Career Highlights
Fukumoto is currently employed at Seiko Epson Corporation, where he continues to advance his research and development efforts in semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of non-volatile memory devices.
Collaborations
Fukumoto collaborates with Takaoki Sasaki, a fellow innovator in the field. Together, they work on various projects aimed at improving semiconductor technologies.
Conclusion
Yohei Fukumoto's contributions to semiconductor memory technology exemplify the spirit of innovation. His patent for a non-volatile semiconductor memory showcases his expertise and commitment to advancing technology. His work continues to influence the industry and pave the way for future developments.