The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Feb. 22, 2013
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Yohei Fukumoto, Shiojiri, JP;

Takaoki Sasaki, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/512 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/28282 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract

A non-volatile semiconductor memory free from adverse effects due to process charge is provided. The non-volatile semiconductor memory includes: a silicon substrate; a first silicon oxide film; a second silicon oxide film; a first silicon nitride film; and a second silicon nitride film, wherein the first silicon oxide film is layered on the silicon substrate, the first silicon nitride film is layered on the first silicon oxide film, the second silicon oxide film is layered on the first silicon nitride film, and the second silicon nitride film is layered to have a first part that is in contact with the first silicon nitride film and a second part that is in contact with the silicon substrate.


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