Shanghai, China

Yoh Tz Chang


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations in Flash Memory Technology by Yoh Tz Chang

Introduction

Yoh Tz Chang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of flash memory. His innovative methods have paved the way for advancements in how flash memories are erased, read, and programmed.

Latest Patents

Yoh Tz Chang holds a patent for "Methods for erasing, reading and programming flash memories." This invention provides a comprehensive approach to managing flash memory operations. The patent details specific voltage applications for different operations, ensuring optimal performance while considering factors such as chip manufacturing processes and circuit design.

Career Highlights

Yoh Tz Chang is currently employed at Integrated Silicon Solution (Shanghai), Inc. His work at this company has allowed him to focus on developing cutting-edge technologies in the semiconductor industry. His expertise in flash memory technology has positioned him as a key player in this field.

Collaborations

Yoh Tz Chang collaborates with his coworker, Kai Tao, to further enhance their research and development efforts. Their combined expertise contributes to the innovative projects at Integrated Silicon Solution.

Conclusion

Yoh Tz Chang's contributions to flash memory technology exemplify the importance of innovation in the semiconductor industry. His patent reflects a deep understanding of the complexities involved in memory management, showcasing his role as a leading inventor in this field.

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