Fuchu, Japan

Yo Tanaka

This inventor holds 1 USPTO granted patent. Top assignee: Canon Anelva Corporation. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yo Tanaka. Retrieved from https://idiyas.com/inventor/yo-tanaka-cm9t9imy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yo Tanaka

Introduction

Yo Tanaka is a notable inventor based in Fuchu, Japan. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of a unique plasma processing apparatus.

Latest Patents

Tanaka holds a patent for a plasma processing apparatus. This apparatus includes a chamber that can be evacuated into a vacuum, a first electrode disposed within the chamber, and a magnet mechanism with a magnet positioned apart from and above the first electrode. Additionally, it features a second electrode facing the first electrode and a magnetic shield member located in at least one of the gaps between the first electrode and the magnet mechanism, as well as between the first electrode and the second electrode.

Career Highlights

Tanaka is currently employed at Canon Anelva Corporation, where he continues to advance his research and development efforts. His work at Canon Anelva has positioned him as a key player in the field of plasma technology.

Collaborations

Some of his notable coworkers include Masayoshi Ikeda and Tsutomu Hiroishi. Their collaborative efforts contribute to the innovative environment at Canon Anelva Corporation.

Conclusion

Yo Tanaka's contributions to plasma processing technology exemplify the spirit of innovation. His patent and work at Canon Anelva Corporation highlight his role as a significant inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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