Yizhou Zhang

Title: Yizhou Zhang: Innovator in Resistive Random Access Memory Technology

Introduction

Yizhou Zhang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory technology, particularly in resistive random access memory (ReRAM). His innovative work has led to the development of a unique operating circuit and method that enhances the functionality of ReRAM.

Latest Patents

Yizhou Zhang holds a patent for an "Operating circuit and operating method of resistive random access memory." This patent describes an operating circuit that includes at least one capacitance connected in series with the resistive random-access memory. This configuration allows the resistive random-access memory to be grounded through the capacitance. The operating method involves applying a forming pulse voltage or a set pulse voltage to achieve the desired operations of the resistive random-access memory.

Career Highlights

Yizhou Zhang is affiliated with Peking University, where he continues to advance research in memory technologies. His work has garnered attention for its potential applications in improving data storage solutions.

Collaborations

Yizhou Zhang collaborates with notable colleagues, including Peng Huang and Yulin Feng. Their combined expertise contributes to the innovative research and development efforts at Peking University.

Conclusion

Yizhou Zhang's contributions to resistive random access memory technology exemplify the impact of innovative thinking in the field of electronics. His patent and ongoing research at Peking University highlight his role as a key figure in advancing memory technology.