This inventor holds 1 USPTO granted patent. Top assignee: Toyohashi University of Technology. Active years: 2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012
Title: Yiping Guo: Innovator in Semiconductor Technology
Introduction
Yiping Guo is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of ferroelectric elements. His innovative work has led to the creation of a patent that showcases his expertise and dedication to advancing technology.
Latest Patents
Yiping Guo holds a patent for a laminar structure on a semiconductor substrate. The patent describes a ferroelectric element that includes a monocrystalline film of γ-AlO3 formed as a buffer layer on a silicon substrate. This structure is designed to enhance the properties of ferroelectric materials, making it a valuable advancement in the field.
Career Highlights
Yiping Guo is affiliated with Toyohashi University of Technology, where he continues to engage in research and development. His work focuses on improving semiconductor technologies and exploring new applications for ferroelectric materials. His contributions have been recognized within the academic and industrial communities.
Collaborations
Yiping Guo has collaborated with notable colleagues, including Makoto Ishida and Kazuaki Sawada. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Yiping Guo's work in semiconductor technology exemplifies the spirit of innovation. His patent and ongoing research contribute to the advancement of the field, showcasing his commitment to excellence in technology development.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile