The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Dec. 12, 2007
Makoto Ishida, Toyohashi, JP;
Kazuaki Sawada, Toyohashi, JP;
Daisuke Akai, Hoi-gun, JP;
Yiping Guo, Shanghai, CN;
Makoto Ishida, Toyohashi, JP;
Kazuaki Sawada, Toyohashi, JP;
Daisuke Akai, Hoi-gun, JP;
Yiping Guo, Shanghai, CN;
National University Corporation Toyohashi University of Technology, Toyohashi-shi, JP;
Abstract
An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-AlOformed as a buffer layer on a silicon substrate. The monocrystalline γ-AlO film is formed on the silicon substrate which is the lowermost layer of an MFMIS structure. On the monocrystalline γ-AlOfilm, there is formed an electrically conductive oxide in the form of a LaNiO3 film as a lower electrode. On the LaNiO3 film, there is formed a PZT thin film which is a ferroelectric material. On the PZT thin film, there is formed a Pt film as an upper electrode.