Hong Kong, China

Yini Zheng

This inventor holds 1 USPTO granted patent. Top assignee: City University of Hong Kong. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yini Zheng. Retrieved from https://idiyas.com/inventor/yini-zheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Yini Zheng: Innovator in Halide Perovskite Technology

Introduction

Yini Zheng is a prominent inventor based in Hong Kong, CN. She has made significant contributions to the field of materials science, particularly in the development of halide perovskites. Her innovative work has led to advancements in photoelectronic devices, showcasing her expertise and dedication to research.

Latest Patents

Yini Zheng holds a patent for a method of fabricating a halide perovskite with a general formula of ABX. This method involves a vapor-liquid-solid process triggered by a catalyst formed from a halide precursor of inorganic element B. The patent also includes the creation of an ABX nanowire formed by this method, which has applications in photoelectronic devices.

Career Highlights

Yini Zheng is affiliated with the City University of Hong Kong, where she continues to push the boundaries of research in her field. Her work has garnered attention for its potential applications in next-generation electronic devices.

Collaborations

Yini Zheng collaborates with esteemed colleagues, including Chung Yin Johnny Ho and Dengji Li. These partnerships enhance her research and contribute to the advancement of technology in her area of expertise.

Conclusion

Yini Zheng's innovative work in halide perovskite technology exemplifies her commitment to advancing materials science. Her contributions are paving the way for future developments in photoelectronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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