Company Filing History:
Years Active: 2019
Title: Yingxin Guan: Innovator in Silicon-Germanium Technology
Introduction
Yingxin Guan is a prominent inventor based in Madison, WI (US). She has made significant contributions to the field of materials science, particularly in the development of high-quality silicon-germanium films. Her innovative work has implications for various applications in electronics and semiconductor technology.
Latest Patents
Yingxin Guan holds a patent for "High-quality, single-crystalline silicon-germanium films." This invention provides high-quality, single-crystalline silicon-germanium (SiGe) with a high germanium content. The technology allows for the growth of layers of silicon-germanium to high sub-critical thicknesses, which can then be released from their growth substrates. This process results in SiGe films that are free from lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations. She has 1 patent to her name.
Career Highlights
Yingxin Guan is associated with the Wisconsin Alumni Research Foundation, where she continues to advance her research and development efforts. Her work has garnered attention for its potential to enhance the performance of electronic devices.
Collaborations
Yingxin has collaborated with notable colleagues, including Max G Lagally and Thomas Francis Kuech. These partnerships have contributed to her innovative research and the successful development of her patented technologies.
Conclusion
Yingxin Guan is a trailblazer in the field of silicon-germanium technology, with her patent showcasing her expertise and innovative spirit. Her contributions are paving the way for advancements in semiconductor applications.