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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10176991 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Jul. 06, 2017

High-quality, single-crystalline silicon-germanium films

Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Max G. Lagally, Madison, WI (US);

Thomas Francis Kuech, Madison, WI (US);

Yingxin Guan, Madison, WI (US);

Shelley A. Scott, Madison, WI (US);

Abhishek Bhat, Madison, WI (US);

Xiaorui Cui, Middleton, WI (US);

Assignee:

WISCONSIN ALUMNI RESEARCH FOUNDATION, Madison, WI (US);

Attorney:

Bell & Manning, LLC

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); C30B 29/52 (2006.01); C30B 25/02 (2006.01); C30B 29/08 (2006.01); C30B 29/68 (2006.01); H01L 31/0352 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H01L 29/165 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C30B 25/02 (2013.01); C30B 29/08 (2013.01); C30B 29/52 (2013.01); C30B 29/68 (2013.01); H01L 21/0262 (2013.01); H01L 21/02395 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02532 (2013.01); H01L 21/7813 (2013.01); H01L 29/165 (2013.01); H01L 29/7378 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 31/035254 (2013.01); H01L 31/109 (2013.01); H01L 31/1812 (2013.01); H01L 31/1892 (2013.01);
Abstract

High-quality, single-crystalline silicon-germanium (SiGe) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide SiGefilms without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

Find Patent Forward Citations

Lagally, Max. (2019). High-quality, single-crystalline silicon-germanium films (U.S. Patent No. 10176991). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10176991

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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