Beijing, China

Yingqun Qi

This inventor holds 1 USPTO granted patent. Top assignee: Beijing Institute of Graphic Communication. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yingqun Qi. Retrieved from https://idiyas.com/inventor/yingqun-qi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yingqun Qi and Electroluminescent Flexographic Printing Ink.

Introduction

Yingqun Qi is an inventor based in Beijing, China, and is associated with the Beijing Institute of Graphic Communication. His work includes an invention concerning electroluminescent ink for flexographic printing.

Latest Patents

Qi is credited with 1 patent: “Electroluminescent Flexographic Printing Ink and Preparation Method Thereof.” The invention describes an ink for printing the luminescent layer of an electroluminescent device. Its formulation includes an electroluminescent material, a monomer, a prepolymer, and an optional leveling agent, and does not include pigment. The disclosed ink has a particle size below 0.1 μm, a viscosity of 20 to 2,000 cP, and a surface tension of 18 to 37 mN/m at 25°C, with a curing time of 10 to 30 minutes.

Career Highlights

Qi’s patent focuses on ink formulation and preparation for flexographic printing, a process used to apply functional layers to devices. The specified composition and physical properties address characteristics relevant to printing and curing an electroluminescent layer.

Collaborations

Beiqing Huang and Xianfu Wei are identified as Qi’s coworkers. The available information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Yingqun Qi’s recorded patent highlights his work on electroluminescent flexographic printing ink and its preparation at the Beijing Institute of Graphic Communication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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