Hsinchu, Taiwan

Ying-ran Tseng

This inventor holds 1 USPTO granted patent. Top assignee: Nanodynamics, Inc.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-ran Tseng. Retrieved from https://idiyas.com/inventor/ying-ran-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Innovations of Ying-ran Tseng in Ink Cartridge Technology

Introduction

Ying-ran Tseng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of ink cartridge technology. His innovative approach has led to the development of a unique porous material designed for channeling ink effectively.

Latest Patents

Ying-ran Tseng holds a patent for a "Porous material for channeling ink in an ink cartridge and method for channeling ink." This invention features a porous material housed within the ink compartment of an ink cartridge. The design includes a body with a protruding portion located near the bottom, which is crucial for directing ink flow. The bottom surface is strategically positioned to create an ink gathering zone with higher local porosity, facilitating improved ink movement and minimizing residual ink.

Career Highlights

Ying-ran Tseng is currently employed at Nanodynamics, Inc., where he continues to innovate in the field of ink technology. His work has garnered attention for its practical applications and efficiency improvements in ink cartridge design.

Collaborations

Ying-ran Tseng collaborates with Ching-Yu Chou, contributing to advancements in their shared field of expertise.

Conclusion

Ying-ran Tseng's innovative work in ink cartridge technology exemplifies the impact of thoughtful design on product functionality. His contributions continue to influence the industry and enhance user experience.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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