Ying Hao Hsieh

Title: Innovations of Ying Hao Hsieh in Epitaxial Growth Technology

Introduction: Ying Hao Hsieh, based in Clifton Park, NY, is a noteworthy inventor contributing to advancements in semiconductor technology. With a total of two patents, his work focuses on protecting gates during epitaxial growth, which is crucial for enhancing the performance of transistors.

Latest Patents: Ying Hao Hsieh holds two significant patents. The first patent, titled "Method and structure for protecting gates during epitaxial growth," outlines a novel approach to safeguard transistor gates. The invention details the deposition of an inner spacer made of a first material adjacent to the transistor gate, followed by the installation of an outer spacer composed of a different material. This method includes forming stressor cavities and creating a divot by recessing the inner spacer. The filled divot offers protection to the transistor gate, effectively preventing undesirable epitaxial growth, often referred to as 'mouse ears.'

Career Highlights: Ying Hao Hsieh is affiliated with GlobalFoundries Inc., where he applies his innovative techniques to improve semiconductor manufacturing. His contributions are vital to the company's commitment to providing advanced technology solutions.

Collaborations: During his career, Ying Hao Hsieh has collaborated with talented professionals, including his coworker Xiuyu Cai. Together, they work towards innovations that drive progress in the semiconductor industry.

Conclusion: Ying Hao Hsieh's contributions to the field of epitaxial growth are notable and illustrate the impact of his inventive spirit. With his patents, he is paving the way for advancements that enhance the reliability and efficiency of semiconductor devices.