Miao Li, Taiwan

Ying-Fu Lin

This inventor holds 3 USPTO granted patents. Top assignee: Kingmax Technology Inc.. Active years: 1999-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-Fu Lin. Retrieved from https://idiyas.com/inventor/ying-fu-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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3 patents (USPTO):Explore Patents

Title: Innovations of Ying-Fu Lin

Introduction

Ying-Fu Lin is a notable inventor based in Miao Li, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in light-emitting devices. With a total of 3 patents to his name, Lin's work has advanced the efficiency and functionality of various electronic components.

Latest Patents

One of Lin's latest patents is a semiconductor light-emitting device with a conductive window layer. This invention features a structure where the light-emitting area is either a double heterostructure or a multi-layer quantum well structure. The light-emitting area is formed on a substrate, and an electrically conductive oxide layer is added as a transparent window layer to eliminate the crowding effect. The substrate consists of a GaAs substrate and a GaAsP layer, which increases the band gap energy. The conductive oxide layer is made of AlZnO(x) material, known for its lower electrical resistivity and high transparency in the visible wavelength region. The window layer is formed using physical vapor deposition or metalorganic chemical vapor deposition.

Another significant patent by Lin is a light-emitting diode with an anti-reflector. This invention includes a semiconductor substrate of a first conductivity type, with a first electrode formed on part of the substrate. A reflection stack of the first conductivity type is created on the substrate, followed by an active layer on the reflection stack. An anti-reflection stack of a second conductivity type is then grown on the active layer, consisting of multiple layers with specific thicknesses. A window layer of the second conductivity type is formed on the anti-reflection stack, culminating in a second electrode on part of the window layer.

Career Highlights

Ying-Fu Lin is currently associated with Kingmax Technology Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in developing advanced light-emitting technologies that are widely used in various applications.

Collaborations

Lin has collaborated with notable coworkers, including Kuan-Chu Kuo and Chiao-Yun Lin, contributing to the advancement of semiconductor technologies.

Conclusion

Ying-Fu Lin's contributions to the field of semiconductor light-emitting devices have made a significant impact on technology. His innovative patents reflect his expertise and commitment to advancing electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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