Company Filing History:
Years Active: 2007
Title: Exploring the Innovations of Yih (Eric) Wang in SRAM Technology
Introduction
Yih (Eric) Wang, based in Portland, Oregon, has made significant contributions to the field of memory technology as an inventor. With a focus on static random access memory (SRAM) devices, Wang's innovative approach has led to the development of an advanced memory cell design. His efforts are part of a broader commitment to enhancing the efficiency and performance of memory components used in various electronic applications.
Latest Patents
Among his notable achievements, Yih (Eric) Wang holds a patent for a Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength. This groundbreaking invention involves an array of memory cells arranged in columns and rows, where each cell comprises two PMOS pull-up devices linked to two NMOS pull-down devices. In different operational modes, such as READ and WRITE, the PMOS devices can be dynamically adjusted to optimize performance by altering their strength through various biasing techniques.
Career Highlights
Wang's career has been significantly shaped by his role at Intel Corporation. Here, he has applied his extensive knowledge in semiconductor technology to innovate and improve memory solutions. His patent showcases not only his technical prowess but also his ability to contribute to advancements that have potential impacts in consumer electronics and beyond.
Collaborations
Throughout his career, Yih (Eric) Wang has collaborated with talented coworkers such as Bo Zheng and Kevin X. Zhang. These partnerships have fostered an environment of innovation and have enabled the exchange of ideas that lead to improved memory technology and research advancements.
Conclusion
Yih (Eric) Wang's work in the development of efficient SRAM technology exemplifies the critical role inventors play in driving innovation within the tech industry. By leveraging his expertise and collaborating with fellow researchers, he continues to make strides that may ultimately revolutionize how memory is utilized in electronic devices, further solidifying his status as a key player in the field of semiconductor advancements.