Yidan Liu

Title: Yidan Liu: Innovator in Non-Volatile Memory Technology

Introduction

Yidan Liu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of non-volatile memory technology. With a total of 2 patents to his name, Liu's work is recognized for its innovative approaches to memory structure testing and efficiency.

Latest Patents

Liu's latest patents include groundbreaking technologies that enhance the performance and accuracy of memory systems. One of his patents, titled "Dynamic bitscan for non-volatile memory," introduces a method for performing a first bitscan of a strict subset of memory cells. This method allows for a determination of whether a second bitscan is necessary, ultimately saving time while maintaining accuracy. The technology applies a verify reference voltage to memory cells, optimizing the scanning process.

Another notable patent is "Word line layer dependent stress and screen voltage," which focuses on testing a 3D memory structure. This structure consists of blocks with layers of word lines connected to control gates of NAND memory cells. Liu's technology allows for the application of layer-dependent voltages, providing a more accurate testing method that accounts for physical differences between layers.

Career Highlights

Yidan Liu is currently employed at Sandisk Technologies Inc., where he continues to develop innovative memory technologies. His work has positioned him as a key figure in the advancement of non-volatile memory solutions.

Collaborations

Liu collaborates with talented coworkers, including Chao Xu and Liang Li, who contribute to the innovative environment at Sandisk Technologies Inc. Their combined expertise fosters a culture of creativity and technological advancement.

Conclusion

Yidan Liu's contributions to non-volatile memory technology exemplify the spirit of innovation in the field. His patents reflect a commitment to enhancing memory efficiency and accuracy, making a lasting impact on the industry.