Xi'an, China

Yichang Wu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Yichang Wu: Innovator in Field Effect Transistor Technology

Introduction

Yichang Wu is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced field effect transistors. His innovative work addresses critical challenges in the industry, showcasing his expertise and dedication to research and development.

Latest Patents

Yichang Wu holds a patent for a "Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof." This invention primarily solves the issue of the existing monolithic heterogeneous integrated cascode-structure field effect transistors lacking reverse blocking characteristics. The design includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a SiN isolation layer. An isolation groove is etched in the middle of the SiN isolation layer, allowing for the preparation of a Si metal oxide semiconductor field effect transistor on one side and a GaN high-electron-mobility transistor on the other. This innovative structure enables the formation of a bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor.

Career Highlights

Yichang Wu is affiliated with Xidian University, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its practical applications and potential to enhance the performance of electronic devices.

Collaborations

Yichang Wu has collaborated with notable colleagues, including Chunfu Zhang and Weihang Zhang. Their combined expertise contributes to the innovative research environment at Xidian University.

Conclusion

Yichang Wu's contributions to the field of field effect transistors exemplify his commitment to innovation and excellence in semiconductor technology. His patent addresses significant challenges in the industry, marking him as a key figure in advancing electronic device performance.

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