Yi Zhao

Title: Yi Zhao’s Contributions to Power Semiconductor Device Manufacturing.

Introduction

Yi Zhao is an inventor based in Chongqing, China, whose work focuses on manufacturing power semiconductor devices. His listed portfolio includes 3 patents, addressing device integration and process simplification. He works at Chongqing Alpha and Omega Semiconductor Limited.

Latest Patents

Zhao’s recent patent work includes “Device Integrating Trench Type Power Device and Source Capacitor and Manufacturing Method Thereof.” The invention describes integrating a source capacitor and an electrostatic discharge (ESD) diode into a trench-type power device. Its manufacturing process uses existing masks, helping control production costs, while the integrated capacitor can reduce reliance on external capacitors and save printed circuit board space.

His other listed patent is “SGT MOSFET Device and Manufacturing Method of Contact Holes of SGT MOSFET Device.” The method pre-embeds an ESD structure to reduce depth differences among several contact holes. This allows the contact holes to be prepared using one photolithography process, reducing the number of process steps and eliminating a separate ESD polysilicon growth process.

Career Highlights

Zhao’s listed inventions address practical manufacturing considerations, including process complexity, production cost, and device integration. His work applies to trench-type power devices and shielded-gate-trench (SGT) MOSFETs.

Collaborations

Zhao is associated with Chongqing Alpha and Omega Semiconductor Limited. His listed coworkers include Liang Shi and Fei Peng.

Conclusion

Yi Zhao’s patent work focuses on improving power semiconductor device manufacturing through integrated designs and streamlined fabrication processes.