Yi-Ting Shih

Title: Innovations of Yi-Ting Shih in Semiconductor Technology

Introduction

Yi-Ting Shih is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods that enhance the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs). His innovative approach addresses critical challenges in high voltage devices.

Latest Patents

Yi-Ting Shih holds a patent titled "Method for increasing an oxide thickness at trench corner of an U-shaped gate metal-oxide-semiconductor field-effect transistor." This invention provides a method for increasing oxide thickness at the trench corner of an UMOSFET. The process involves providing an N-type substrate and forming various regions within it. A trench is defined through lithography, and a pad oxide is formed along the trench. An oxidation barrier is then created upon the pad oxide. A thermal oxidation process is employed to effectively form a corner oxide at the trench corner. This invention aims to increase oxide thickness near the trench bottom, which can be applied to high voltage devices, such as SiC. The method significantly mitigates the conventional electric field crowding effect occurring at the trench corner, thereby increasing breakdown voltages.

Career Highlights

Yi-Ting Shih is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in enhancing device performance and reliability.

Collaborations

Yi-Ting Shih collaborates with esteemed colleagues, including Bing-Yue Tsui and Fang-Hsin Lu. Their combined expertise contributes to the innovative research environment at their institution.

Conclusion

Yi-Ting Shih's contributions to semiconductor technology exemplify the impact of innovative methods in enhancing device performance. His patent reflects a significant advancement in the field, addressing critical challenges faced by high voltage devices.