Yi Shan

Title: Yi Shan - Innovator in Thyristor Technology

Introduction

Yi Shan is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of thyristors. His innovative approach has led to advancements that enhance device performance and reliability.

Latest Patents

Yi Shan holds a patent for a thyristor comprising a special doped region characterized by an LDD region and a halo implant. The invention provides a device for electrostatic discharge and outlines a method of manufacturing it. The patent describes the formation of a P-well on the substrate, along with the creation of Ndoped and Pdoped regions. The design incorporates shallow trench isolation for enhanced device isolation. The introduction of a halo injection with an inverse type under the source-drain region effectively lowers the reverse conduction voltage of the collector, thereby reducing the trigger voltage of the device.

Career Highlights

Yi Shan is currently employed at Grace Semiconductor Manufacturing Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that improve the efficiency and performance of electronic devices.

Collaborations

Yi Shan collaborates with Jun He, a fellow innovator in the field. Their combined expertise contributes to the advancement of semiconductor technologies and the development of new solutions.

Conclusion

Yi Shan's contributions to thyristor technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at Grace Semiconductor Manufacturing Corporation highlight his role as a key player in advancing electronic device technology.