The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Dec. 22, 2008
Yi Shan, Shanghai, CN;
Jun He, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
The present invention provides a device for electrostatic discharge and the method of manufacturing thereof. P-well is formed on the substrate, and a first Ndoped region, a second Ndoped region and a Pdoped region are formed in the P-well; both ends of each doped region adopt shallow trench isolation for isolation. A lightly doped source-drain region portion is formed between the first Ndoped region and the shallow trench isolation connected thereto. Under the source-drain region, a halo injection with an inverse type is formed. The reverse conduction voltage of the collector of the bipolar transistor is lowered through the introduction of special doped region and the adoption of lightly doped source-drain technology for manufacturing the source-drain region as well as the manufacturing of halo injection with inverse type under the source-drain region, thus reducing the trigger voltage of the device.