Yi-Nung Lin

Title: Yi-Nung Lin: Innovator in Memory Structure Technology

Introduction

Yi-Nung Lin is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory structures. His innovative work has led to the development of a unique patent that enhances the efficiency and functionality of memory devices.

Latest Patents

Yi-Nung Lin holds a patent for a memory structure that includes transistors and a capacitor, along with a manufacturing method. The patent describes a memory structure comprising first and second transistors, an isolation structure, and a capacitor. The first and second transistors are positioned on a substrate, with the isolation structure situated between them. The capacitor is strategically placed between the transistors and features a body portion along with first and second extension portions. These extensions connect to the source and drain regions of the transistors, optimizing the memory structure's performance.

Career Highlights

Yi-Nung Lin is associated with Powerchip Semiconductor Manufacturing Corporation, where he applies his expertise in semiconductor technology. His work at the company has been instrumental in advancing memory structure designs and manufacturing processes.

Collaborations

Yi-Nung Lin has collaborated with talented coworkers, including Yu-An Chen and Shih-Siang Chen. Their combined efforts contribute to the innovative projects at Powerchip Semiconductor Manufacturing Corporation.

Conclusion

Yi-Nung Lin's contributions to memory structure technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a significant advancement in memory device design, showcasing his role as a leading inventor in this field.