The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jul. 12, 2019
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Yu-An Chen, Hsinchu, TW;
Shih-Siang Chen, Taichung, TW;
Shih-Ping Lee, Hsinchu, TW;
Yi-Nung Lin, New Taipei, TW;
Po-Yi Wu, Hsinchu, TW;
Chen-Tso Han, Taipei, TW;
Bo-An Tsai, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A memory structure including first and second transistors, an isolation structure and a capacitor and a manufacturing method thereof are provided. The first and second transistors are disposed on the substrate. The isolation structure is disposed in the substrate between the first and second transistors. The capacitor is disposed between the first and second transistors. The capacitor includes a body portion and first and second extension portions. The first and second extensions are extended from the body portion into the substrate at two sides of the isolation structure and connected to the source/drain regions of the first and the second transistors, respectively. The widths of first and second extension portions are decreased downward from a top surface of the isolation structure.