Taipei, Taiwan

Yi-Mei Yang

This inventor holds 1 USPTO granted patent. Top assignee: National Science Council. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Mei Yang. Retrieved from https://idiyas.com/inventor/yi-mei-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Yi-Mei Yang: Innovator in Plasma Fabrication

Introduction: Yi-Mei Yang is a distinguished inventor based in Taipei, Taiwan. With a keen focus on innovations in plasma technology, he has made significant contributions to the field, particularly through his patented processes.

Latest Patents: Yi-Mei Yang holds a patent for a groundbreaking process titled "Process for Fabricating Plasma with Feedback Control on Plasma Density." This invention showcases his ability to integrate advanced techniques in controlling plasma, which is essential for various applications in energy and materials science.

Career Highlights: Yang currently works at the National Science Council, where he has honed his skills as a researcher and innovator. His work has influenced advancements in plasma technology, providing improvement in both efficiency and control.

Collaborations: Throughout his career, Yi-Mei Yang has collaborated with notable colleagues, including Cheng-Hung Chang and Keh-Chyang Leou. These partnerships have fostered a collaborative environment conducive to research and development in plasma applications.

Conclusion: Yi-Mei Yang exemplifies the spirit of innovation in the field of plasma fabrication. His contributions and collaborations highlight the importance of teamwork and creativity in advancing technology. As he continues on his career path, his work will undoubtedly inspire future advancements in plasma-related fields.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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