Santa Clara, CA, United States of America

Yi Jin

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Jin. Retrieved from https://idiyas.com/inventor/yi-jin-sdkysz1a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yi Jin - Innovator in Oxide Quality Differentiation

Introduction

Yi Jin is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of materials science, particularly in the area of oxide quality differentiation. With a focus on innovation, Yi has secured a patent that showcases his expertise and dedication to advancing technology.

Latest Patents

Yi Jin holds a patent for "Oxide Quality Differentiation." This invention reflects his commitment to improving the quality and performance of oxide materials, which are crucial in various applications within the semiconductor industry. His innovative approach has the potential to enhance manufacturing processes and product reliability.

Career Highlights

Yi Jin is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display industries. His work at Applied Materials has allowed him to collaborate with some of the brightest minds in the field, furthering his knowledge and expertise in materials science.

Collaborations

One of Yi's notable collaborators is Yimin Huang. Together, they have worked on projects that aim to push the boundaries of technology and improve the efficiency of manufacturing processes.

Conclusion

Yi Jin's contributions to oxide quality differentiation and his role at Applied Materials, Inc. highlight his importance in the field of materials science. His innovative spirit and dedication to excellence continue to drive advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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