Nanjing, China

Yi Jiang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Jiang. Retrieved from https://idiyas.com/inventor/yi-jiang-j9ghgg1z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Yi Jiang - Innovator in Intelligent Terminal Energy Saving Solutions

Introduction

Yi Jiang is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of energy efficiency in intelligent terminals. His innovative approach leverages artificial intelligence to enhance user experience while conserving energy.

Latest Patents

Yi Jiang holds a patent for an "Intelligent terminal energy saving method and device based on AI prediction." This patent outlines a method that collects application-related operation data on intelligent terminals. It employs AI analysis to predict timing and implement restriction measures on applications running in the background. The goal is to reduce power consumption and extend battery life without compromising user experience.

Career Highlights

Yi Jiang is associated with Samsung Electronics Co., Ltd., where he applies his expertise in developing energy-saving technologies. His work focuses on integrating AI into everyday devices to improve efficiency and sustainability.

Collaborations

He collaborates with talented colleagues, including Hua Liu and Hai Sun, to drive innovation in energy-saving technologies. Their combined efforts contribute to advancements in the field.

Conclusion

Yi Jiang's work exemplifies the intersection of technology and sustainability. His innovative solutions are paving the way for more efficient intelligent terminals, ultimately benefiting users and the environment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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