This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovative Contributions of Yi-Jhih Lin
Introduction
Yi-Jhih Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of extreme ultraviolet (EUV) lithography. His work is crucial for advancing the capabilities of photolithography in the manufacturing of integrated circuits.
Latest Patents
Yi-Jhih Lin holds a patent for an "Interstitial type absorber for extreme ultraviolet mask." This innovative method involves lithographically patterning a photoresist. The process includes receiving a wafer with the photoresist and exposing it using EUV radiation reflected by an EUV mask. The mask consists of a substrate, a reflective multilayer stack, a capping layer, and a patterned absorber layer. The patterned absorber layer features a matrix metal and an interstitial element occupying interstitial sites of the matrix metal. The size ratio of the interstitial element to the matrix metal ranges from about 0.41 to about 0.59. This patent highlights Lin's expertise in enhancing the precision of semiconductor manufacturing.
Career Highlights
Yi-Jhih Lin is associated with Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His role at TSMC allows him to contribute to cutting-edge research and development in semiconductor technologies. His innovative approaches have positioned him as a key figure in the advancement of EUV lithography.
Collaborations
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Conclusion
Yi-Jhih Lin's contributions to semiconductor technology, particularly through his patent on EUV lithography, demonstrate his innovative spirit and technical expertise. His work continues to influence the future of semiconductor manufacturing.