Yi-huan Chen

Title: The Innovative Contributions of Yi-huan Chen

Introduction

Yi-huan Chen is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Metal-Oxide-Semiconductor (MOS) devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Yi-huan Chen holds a patent titled "Recessed STI as the gate dielectric of HV device." This patent describes a method that includes forming an isolation region extending into a semiconductor substrate. It involves etching a top portion of the isolation region to create a recess and forming a gate stack that extends into this recess, overlapping a lower portion of the isolation region. Additionally, a source region and a drain region are formed on opposite sides of the gate stack. This invention is crucial for enhancing the performance of MOS devices, which are widely used in electronic applications. He has 1 patent to his name.

Career Highlights

Yi-huan Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to work on cutting-edge technologies and contribute to advancements in semiconductor manufacturing processes.

Collaborations

Throughout his career, Yi-huan Chen has collaborated with esteemed colleagues, including Kong-Beng Thei and Fu-Jier Fan. These collaborations have fostered a productive environment for innovation and have led to the development of new technologies in the semiconductor field.

Conclusion

Yi-huan Chen's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor. His innovative methods continue to impact the industry positively.