Yi-hsiung Lin

Title: The Innovative Contributions of Yi-hsiung Lin

Introduction

Yi-hsiung Lin is a notable inventor based in Fishkill, NY, who has made significant contributions to the field of semiconductor technology. With a focus on enhancing the manufacturing processes of semiconductor devices, Lin's work has implications for the efficiency and effectiveness of electronic components.

Latest Patents

Yi-hsiung Lin holds a patent titled "Multiple layer resist scheme implementing etch recipe particular to each layer." This patent details methods for forming a metal line and/or via critical dimension (CD) in a single or dual damascene process on a semiconductor substrate. The innovative method includes the formation of a multiple layer resist scheme, which consists of a first planarizing layer of a first type material, a second dielectric layer of a second type material, and a third photoresist layer of a third type material. The materials used alternate between organic and inorganic types. The third layer is specifically patterned for the metal line and/or via CD. The process involves sequential etching to achieve accurate CD formation while ensuring an adequate resist budget.

Career Highlights

Lin is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to contribute to cutting-edge technologies in the semiconductor industry. His innovative approaches have been instrumental in advancing the capabilities of semiconductor manufacturing.

Collaborations

Lin has collaborated with notable colleagues, including Nicholas C M Fuller and Timothy Joseph Dalton. These collaborations have fostered a productive environment for innovation and have led to advancements in their respective fields.

Conclusion

Yi-hsiung Lin's contributions to semiconductor technology through his patent and work at IBM highlight his role as an influential inventor. His innovative methods are paving the way for future advancements in the industry.