The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Nov. 04, 2004
Nicholas C. M. Fuller, Elmsford, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Raymond Joy, Singapore, SG;
Yi-hsiung Lin, Fishkill, NY (US);
Chun Hui Low, Johor, MY;
Nicholas C. M. Fuller, Elmsford, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Raymond Joy, Singapore, SG;
Yi-hsiung Lin, Fishkill, NY (US);
Chun Hui Low, Johor, MY;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming a metal line and/or via critical dimension (CD) in a single or dual damascene process on a semiconductor substrate, and the resist scheme implemented, are disclosed. The method includes forming a multiple layer resist scheme including a first planarizing layer of a first type material over the substrate, a second dielectric layer of a second type material over the planarizing layer, and a third photoresist layer of a third type material over the dielectric layer. The types of material alternate between organic and inorganic material. The third layer is patterned for the metal line and/or via CD. Sequential etching to form the metal line and/or via critical dimension using a tailored etch recipe particular to each of the first photoresist layer, the second dielectric layer and the third planarizing layer as each layer is exposed is then used. Accurate CD formation and adequate resist budget are provided.