Yi-Hsiung Chen

Title: Yi-Hsiung Chen: Innovator in Light Emitting Diode Technology

Introduction

Yi-Hsiung Chen is a prominent inventor based in Dashi, Taiwan. He has made significant contributions to the field of optoelectronics, particularly in the development of light emitting diodes (LEDs). With a total of two patents to his name, Chen's work focuses on enhancing the performance and efficiency of LED technology.

Latest Patents

Chen's latest patents include a groundbreaking method for producing light emitting diodes using metal diffusion bonding technology. The primary objective of this invention is to provide a manufacturing method that utilizes this technology effectively. The AlInGaP light emitting diode epitaxial structure is bonded to a permanent substrate that has a thermal expansion coefficient similar to that of the epitaxial structure. After bonding, the temporary substrate is removed, resulting in an LED with a vertical structure that offers improved performance. Additionally, this invention aims to create a high-performance LED that employs metal diffusion technology and wet chemical etching technology to roughen the LED surface, thereby enhancing light extraction efficiency.

Career Highlights

Yi-Hsiung Chen is associated with Arima Optoelectronics Corporation, where he continues to innovate in the field of optoelectronics. His work has been instrumental in advancing LED technology, making it more efficient and effective for various applications.

Collaborations

Chen has collaborated with notable coworkers, including Ying-Che Sung and Chao-Hsin Wang. Their combined efforts contribute to the ongoing advancements in LED technology and optoelectronics.

Conclusion

Yi-Hsiung Chen's contributions to the field of light emitting diodes through his innovative patents and collaborations highlight his role as a key figure in optoelectronics. His work continues to influence the development of more efficient LED technologies.