Scottsdale, AZ, United States of America

Yi-Feng Hsia

This inventor holds 2 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Semiconductor Components Industries, LLC. Active years: 2022-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Feng Hsia. Retrieved from https://idiyas.com/inventor/yi-feng-hsia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2024

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2 patents (USPTO):Explore Patents

Title: The Innovations of Yi-Feng Hsia

Introduction

Yi-Feng Hsia is a notable inventor based in Scottsdale, AZ (US). He has made significant contributions to the field of power systems, particularly in the area of fault protection and gate driver circuits. With a total of 2 patents to his name, Hsia's work reflects a commitment to enhancing the reliability and efficiency of electronic systems.

Latest Patents

One of Hsia's latest patents is focused on fault protection testing in a high-power switching system. This innovation involves a power system that includes a gate driver configured with test circuitry to detect faults. The system is designed to test the fault detection circuitry to confirm its ability to identify faults effectively. Various methods and circuit implementations are disclosed to assess the system's fault detection capabilities. The testing process may involve different configurations and protocols to determine which components are likely responsible for a failure. Notably, the approach does not significantly add complexity, as a test input to initiate a test can be communicated from a low voltage side to a high voltage side over a shared communication channel.

Another significant patent by Hsia is related to a gate driver circuit. This electronic circuit receives an input signal and a signal corresponding to the current through a switch. It produces an output signal for controlling the switch based on the input signal. When the input signal is de-asserted, the gate driver circuit can turn the switch off at a normal turn-off rate if the current is below an overcurrent (OC) threshold. Conversely, if the current exceeds the OC threshold, the circuit turns off the switch at a slower OC turn-off rate.

Career Highlights

Yi-Feng Hsia is currently employed at Semiconductor Components Industries, LLC, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of power systems and electronic circuits.

Collaborations

Hsia has collaborated with notable colleagues, including Kinam Song and Vlad Anghel, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

In summary, Yi-Feng Hsia is a distinguished inventor whose contributions to power systems and gate driver circuits have made a significant impact in the field of electronics. His innovative patents reflect a deep understanding of the complexities involved in fault detection and circuit control.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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