Changchun, China

Yi Du

This inventor holds 1 USPTO granted patent. Top assignee: Jilin University. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Du. Retrieved from https://idiyas.com/inventor/yi-du-qmmb5d9e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Yi Du - Innovator in Amorphous GeH Preparation

Introduction

Yi Du is a notable inventor based in Changchun, China. He has made significant contributions to the field of preparation technologies, particularly with his innovative methods for creating amorphous GeH. His work is characterized by a focus on efficiency and purity in the preparation process.

Latest Patents

Yi Du holds a patent for a "Method for preparing amorphous GeH under high pressure." This invention provides a novel approach to preparing amorphous GeH by sealing crystalline GeH, a pressure calibration object, and a pressure transmitting medium within a diamond anvil cell. The method involves adjusting the pressure in the cavity to achieve amorphous GeH at room temperature. This technique minimizes impurities and ensures the production of pure amorphous GeH, showcasing simple operations and good repeatability. He has 1 patent to his name.

Career Highlights

Yi Du is affiliated with Jilin University, where he continues to advance his research and development in the field of material science. His work has garnered attention for its practical applications and innovative techniques.

Collaborations

He has collaborated with colleagues such as Quanjun Li and Xiaoling Jing, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Yi Du's contributions to the preparation of amorphous GeH highlight his role as a significant inventor in the field. His innovative methods and dedication to research continue to influence advancements in material science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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