Sichuan, China

Yi Chen

This inventor holds 2 USPTO granted patents. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Chen. Retrieved from https://idiyas.com/inventor/yi-chen-ypuhdi4f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.2

ph-index = 1


Years Active: 2023

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2 patents (USPTO):Explore Patents

Title: Innovations by Yi Chen in Power Electronics

Introduction

Yi Chen is a notable inventor based in Sichuan, China, recognized for his contributions to the field of power electronics. With a total of 2 patents, he has made significant advancements that enhance the efficiency and reliability of power devices.

Latest Patents

Yi Chen's latest patents include a layout design method, chip, and terminal of a power device. This patent discloses a layout design method that optimizes the routing of non-top metal, allowing for a more efficient arrangement of metal wires. The design reduces parasitic resistance and minimizes costs by eliminating unnecessary stack-up designs. His second patent focuses on an electrothermal co-simulation method, system, and terminal for power electronic systems. This innovation allows for real-time electrical parameter acquisition and dynamic control of the electrical simulation state, which accelerates simulation convergence.

Career Highlights

Throughout his career, Yi Chen has demonstrated a commitment to advancing power electronic technology. His innovative approaches have led to significant improvements in device reliability and performance.

Collaborations

Some of his notable coworkers include Gaoqiang Dai and Xin Wang, who have contributed to his research and development efforts.

Conclusion

Yi Chen's work in power electronics showcases his dedication to innovation and improvement in the field. His patents reflect a deep understanding of the complexities involved in power device design and simulation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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